SELENIUM IMPLANTATION INTO SILICON STUDIED BY DLTS TECHNIQUE.RICHOU F; PELOUS G; LECROSNIER D et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 8; PP. 525-527; BIBL. 8 REF.Article

THERMAL GENERATION OF CARRIERS IN GOLD-DOPED SILICONRICHOU F; PELOUS G; LECROSNIER D et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6252-6257; BIBL. 29 REF.Article

CHANNELING OF BORON IONS INTO SILICON.LECROSNIER D; PAUGAM J; GALLOU J et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 7; PP. 323-325; BIBL. 9 REF.Article

GOLD GETTERING IN SILICON BY PHOSPHOROUS DIFFUSION AND ARGON IMPLANTATION: MECHANISMS AND LIMITATIONSLECROSNIER D; PAUGAM J; PELOUS G et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5090-5097; BIBL. 38 REF.Article

OPTIMIZATION OF AVALANCHE SILICON PHOTODIODES: A NEW STRUCTURE.LECROSNIER D; PELOUS G; AMOUROUX C et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 595-597Conference Paper

INFLUENCE OF PHOSPHORUS-INDUCED POINT DEFECTS ON A GOLD-GETTERING MECHANISM IN SILICONLECROSNIER D; PAUGAM J; RICHOU F et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1036-1038; BIBL. 13 REF.Article

LONG-RANGE ENHANCEMENT OF BORON DIFFUSIVITY INDUCED BY A HIGH-SURFACE-CONCENTRATION PHOSPHORUS DIFFUSIONLECROSNIER D; GAUNEAU M; PAUGAM J et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 224-226; BIBL. 15 REF.Article

DIFFUSION DU PHOSPHORE ET DU BORE DANS LE SILICIUM A PARTIR DE COUCHES ENTERREES OBTENUES PAR IMPLANTATION.LECROSNIER D; EVRARD D; FLOCH J et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 133-140; BIBL. 8 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

Development of gate-lag effect on GaAs power MESFETs during agingDUMAS, J.-M; GARAT, F; LECROSNIER, D et al.Electronics Letters. 1987, Vol 23, Num 4, pp 139-141, issn 0013-5194Article

N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONSHENRY L; LECROSNIER D; L'HARIDON H et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 102-103; BIBL. 5 REF.Article

Dégradation des MESFETs GaAs: mécanismes liés à l'interface GaAs/SiO₂ = Failure of GaAs MESFET's: degradation mechanisms at the GaAs/SiO₂ interfaceDUMAS, J. M; BRESSE, J. F; LECROSNIER, D et al.Revue de physique appliquée. 1987, Vol 22, Num 5, pp 299-302, issn 0035-1687Article

Analysis of surface-induced degradation of GaAs power MESFET'sDUMAS, J. M; LECROSNIER, D; BRESSE, J. F et al.IEEE electron device letters. 1985, Vol 6, Num 4, pp 192-194, issn 0741-3106Article

ETUDE DES MECANISMES DE GETTERING" DANS LE SILICIUMLECROSNIER D; RICHOU F.1981; ; FRA; DA. 1981; DGRST/78 7 2097; 97 P.; 30 CM; ABS. ENG; BIBL. DISSEM.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

GalnAs junction fet fully dry etched by metal organic reactive ion etching techniqueLECROSNIER, D; HENRY, L; LE CORRE, A et al.Electronics Letters. 1987, Vol 23, Num 24, pp 1254-1255, issn 0013-5194Article

X-ray photoelectron diffraction applied to crystallinity studies of III-V surfacesOLIVIER, J; ALNOT, P; WYCZISK, F et al.Physica scripta (Print). 1990, Vol 41, Num 4, pp 522-525, issn 0031-8949Article

Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solutionDUMAS, J. M; LECROSNIER, D; PAUGAM, J et al.Electronics Letters. 1985, Vol 21, Num 3, pp 115-116, issn 0013-5194Article

Influence des défauts de surface sur le comportement des MESFET GaAs = Influence of surface defects on the behaviour of GaAs MESFET'LE MOUELLIC, C; MOTTET, S; DUMAS, J.-M et al.Revue de physique appliquée. 1984, Vol 19, Num 2, pp 149-154, issn 0035-1687Article

Residual defect center in GaInAs/InP films grown by molecular beam epitaxyLOUALICHE, S; GAUNEAU, A; LE CORRE, A et al.Applied physics letters. 1987, Vol 51, Num 17, pp 1361-1363, issn 0003-6951Article

The role of plasma oxide in InP MIS structuresCARMONA, R; FARRÉ, J; LECROSNIER, D et al.Revue de physique appliquée. 1984, Vol 19, Num 2, pp 155-159, issn 0035-1687Article

Epitaxial growth on InP substrates etched with methane reactive ion etching techniqueHENRY, L; VAUDRY, C; LE CORRE, A et al.Electronics Letters. 1989, Vol 25, Num 18, pp 1257-1259, issn 0013-5194, 3 p.Article

Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InPLOUALICHE, S; GINUDI, A; LE CORRE, A et al.Applied physics letters. 1989, Vol 55, Num 20, pp 2099-2101, issn 0003-6951Article

Schottky and field-effect transistor fabrication on InP and GalnAsLOUALICHE, S; L'HARIDON, H; LE CORRE, A et al.Applied physics letters. 1988, Vol 52, Num 7, pp 540-542, issn 0003-6951Article

Low-temperature DC characteristics of pseudomorphic Ga_0.18In_0.82P/InP/Ga_0.47In_0.53As HEMTLOUALICHE, S; GINUDI, A; LE CORRE, A et al.IEEE electron device letters. 1990, Vol 11, Num 4, pp 154-155, issn 0741-3106Article

Protection of InP EPI-ready wafers by controlled oxide growthGALLET, D; GENDRY, M; HOLLINGER, G et al.Journal of electronic materials. 1991, Vol 20, Num 12, pp 963-965, issn 0361-5235Conference Paper

Dopage béryllium de couches InGaAs élaborées par épitaxie jet moléculaire: étude de la compensation = Compensation study of beryllium doped MBE InGaAs layersROIZES, A; DAVID, J. P; LECORRE, A et al.Revue de physique appliquée. 1989, Vol 24, Num 4, pp 447-451, issn 0035-1687Article